improved InP product line | Forum

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Dr. Shaka, said, "We are pleased to offer InP substrate to our customers including many who are developing better and more reliable for Fiber optics network components. Our InP substrate has excellent properties, a series of doping experiments have determined the effective segregation coefficient to be 1.6 × 10−3 for Fe in InP. Semi-insulating InP crystals with resistivity > 10^7 ohm—cm have been grown consistently from melts doped with 150 ppm Fe. The availability improve boule growth and wafering processes." and "Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our InP substrate are natural by products of our ongoing efforts, currently we are devoted to continuously develop more reliable products."

PAM-XIAMEN's improved InP product line has benefited from strong tech. support from Native University and Laboratory Center.

Now it shows an example as follows:

Item Specification Unit
Growth Method LEC -
Conductivity Type n -
Dopant Si -
Carrier Density (1~6) x 1018 cm -3
Mobility 1200 ~ 2000 cm2鈻? V-1 鈻?sec-1
Resistivity (0.6~6) x 10-3 Ω 鈻?cm
EPD ≤500 cm -2
Orientation (100) ± 0.2 degree
Thickness 350 ± 10 μm
TTV ≤ 2 μm
Bow - μm
Finish (surface)
(Back) Mirror Polished (Etched)
Mirror Polished (Etched) -
Individual N2 gas Package
Size (Diameter) 50 ± 0.1 . Wholesale Jerseys   Wholesale Jerseys China   Wholesale Jerseys China Free Shipping   Wholesale NFL Jerseys China   Wholesale New Nike NCAA Jerseys   Wholesale Basketball Jerseys From China   Wholesale College Soccer Jerseys   Wholesale Nike NBA Jerseys   Cheap College Jerseys Online   Wholesale Jerseys From China